Optical properties ofMgH2measuredin situby ellipsometry and spectrophotometry

Optical properties of MgH2 measured in situ by ellipsometry and spectrophotometry

J. Isidorsson,* I. A. M. E. Giebels, H. Arwin, and R. Griessen Faculty of Sciences, Department of Physics and Astronomy, Condensed Matter Physics, Vrije Universiteit, De Boelelaan 1081, 1081 HV Amsterdam, The Netherlands Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden ~Received 18 May 2003; published 29 September ...

Determination of SiGe Optical Properties for Accurate Ellipsometry Measurement

For mobility enhancement through local stress SiGe films are very attractive candidates for the 28nm CMOS technology node. In a production environment the in-line measurements of the SiGe thickness and Ge content become key parameters. Although techniques such as XRD and SIMS are traditionally adopted as reference technique for Ge thickness and concentration there is a clear need for rapid and ...

Application of spectroscopic ellipsometry and Mueller ellipsometry to optical characterization.

This article provides a brief overview of both established and novel ellipsometry techniques, as well as their applications. Ellipsometry is an indirect optical technique, in that information about the physical properties of a sample is obtained through modeling analysis. Standard ellipsometry is typically used to characterize optically isotropic bulk and/or layered materials. More advanced tec...

control of the optical properties of nanoparticles by laser fields

در این پایان نامه، درهمتنیدگی بین یک سیستم نقطه کوانتومی دوگانه(مولکول نقطه کوانتومی) و میدان مورد مطالعه قرار گرفته است. از آنتروپی ون نیومن به عنوان ابزاری برای بررسی درهمتنیدگی بین اتم و میدان استفاده شده و تاثیر پارامترهای مختلف، نظیر تونل زنی(که توسط تغییر ولتاژ ایجاد می شود)، شدت میدان و نسبت دو گسیل خودبخودی بر رفتار درجه درهمتنیدگی سیستم بررسی شده اشت.با تغییر هر یک از این پارامترها، در...

Ab initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3